New 20V Trio Meets VRM10 Spec and Power Demands of Next-Generation Processors
February 24, 2004 - International Rectifier introduced three new devices to their DirectFETTM MOSFET family. The new 20V N-channel devices are optimized for VRM 10 power systems and high frequency, high current DC-DC converters for next generation Intel® and AMD processors in high-end desktop computers and servers, as well as advanced telecom and datacom systems.
The IRF6623 features enhanced control MOSFET performance, with a 30% reduction in device on-resistance and gate charge product, and is 50% smaller than other high-performing 20V control MOSFETs on the market. In addition, the RDS(on) and Qg product at 4.5V is 48.4mOhm-nC, and the Miller charge is 4.0nC, reducing switching losses.
IRF6620 is ideal for synchronous MOSFET applications up to 35A. The IRF6620 combines very low Qg, Qgd, and QRR with a 30% improvement in RDS(on) compared to other high-performing 20V synch MOSFETs on the market. Typical RDS(on) for this product is 2.1mOhm (2.7mOhm max.) at 10V.
The IRF6609 is designed for the highest performance in high-current (33A or more) synchronous MOSFET applications. The IRF6609 combines very low gate charge (Qg), Miller charge (Qgd) and ultra-low reverse recovery charge (QRR) with typical device on-resistance (RDS(on)) of 1.6mOhm (2.0mOhm max.) at 10V.
| Part Number | Package | BVDSS(V) | RDS(on) typ. @10V (mOhms) | RDS(on) max. @10V (mOhms) | RDS(on) typ. @4.5V (mOhms) | RDS(on) max. @4.5V (mOhms) | VGS(V) | ID @ Tc=25єC (A) | QG typ. (nC) | QGD typ. (nC) |
| IRF6623 | DirectFET | 20 | 4.4 | 5.7 | 7.5 | 9.7 | 20 | 55 | 11.0 | 4.0 |
| IRF6620 | DirectFET | 20 | 2.1 | 2.7 | 2.8 | 3.6 | 20 | 150 | 28.0 | 8.8 |
| IRF6609 | DirectFET | 20 | 1.6 | 2.0 | 2.0 | 2.6 | 20 | 150 | 46 | 15 |
Availability and Pricing
The new DirectFET MOSFETs are available now. Pricing for the IRF6620 is US $0.98 each, the IRF6623 is US $0.78 each and the IRF6609 is US $1.25 each in 10,000-unit quantities.
