International Rectifier Introduces Economical, High Power, 150kHz IGBTs for High Frequency SMPS Applications

International Rectifier IRGP50B60PD1 IRGP35B60PD IRGP20B60PD IRGB20B60PD1

International Rectifier introduces new WARP2TM 600V 50A, 35A and 20A non-punch through (NPT) IGBTs with improved turn-off characteristics for high current, high frequency switch-mode power supply (SMPS) circuits in telecom and server systems. The new WARP2 NPT IGBTs offer performance and efficiency with a better price-to-performance value than power MOSFETs. The WARP2 IGBTs are co-packaged with HEXFRED® diodes, which enable better performance compared to the integral body diodes in power MOSFETs. The new devices are available in the TO-247 and TO-220 packages.

WARP2 IRGP50B60PD1, IRGP35B60PD, IRGP20B60PD, IRGB20B60PD1

"The new WARP2 IGBTs are the best choice for both PFC and ZVS applications, especially when price is as important as performance. These devices offer the benefit of lower conduction losses compared to a power MOSFET, and can efficiently operate up to 150kHz due to its very short tail current. IGBTs have much better current density than power MOSFETs, so fewer devices may be required, saving cost and improving the power density," said Bhasy Nair, International Rectifier Marketing Manager for the AC-DC Sector.

The new WARP2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and hence faster turn-off. In addition, negligible turn-off tail current and low turn-off switching loss, or EOFF, enables designers to achieve higher operating frequencies.

The improvement in switching performance, combined with positive thermal coefficient characteristics and the lower gate turn-on charge, enables higher current density. The WARP2 IGBTs exhibit excellent current sharing properties like power MOSFETs when operated in parallel. Unlike power MOSFETs, the conduction losses of these IGBTs remain essentially flat.

The new SMPS NPT IGBTs handle as much as 50A in the TO-247 package, which is 85% more current capacity compared to IR's 600V MOSFET in the same package, and up to 20A in TO-220 package, or 18% more current capacity compared to IR's 600V MOSFET in a TO-220 package.

Part Number Package VCES IC @ 25oC VCE(on) typ Co-Pack Diode Qg
IRGP50B60PD1 TO-247 600 50A 2.0V @33A 15A 205nC
IRGP35B60PD TO-247 600 35A 1.85V @22A 15A 160nC
IRGP20B60PD TO-247 600 20A 2.05V @13A 8A 68nC
IRGB20B60PD1 TO-220 600 20A 2.05V @13A 4A 68nC

Availability and Pricing

The new high frequency NPT IGBTs are available immediately. Pricing begins at US $1.03 each for the IRGB20B60PD1 in 10,000-unit quantities.

JLCPCP: 2USD 2Layer 5PCBs, 5USD 4Layer 5PCBs

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