NXP Semiconductors introduced the first of a series of silicon-based discrete solutions, with the release of the BFU725F microwave NPN transistor. The BFU725F features an impressive blend of high switching frequency, high-gain and very low noise that make it an ideal solution for a variety of RF applications. The ultra-low noise figure improves the reception of the sensitive RF receivers found in various wireless devices, such as GPS systems, DECT phones, satellite radio, WLAN / CDMA applications, while the high cut-off frequency is ideally suited to meet the needs of applications that operate in the 10 GHz to 30 GHz range, like satellite low noise blocks.
Developed to address both the performance needs of today’s devices and the cost concerns of producers, the BFU725F transistor was developed using NXP’s proven silicon germanium carbon (SiGeC) process technology for discrete components, the same process used to develop monolithic ICs and wideband transistors.
Other solutions already on the market include the TFF1004HN, a highly integrated IC for satellite LNBs and the BFU725F microwave transistor, NXP is developing several more silicon-based wideband transistors and MMICs due out later this year and in early 2008.
The BFU725F is RoHS compliant and permits very low noise (0.43 dB at 1.8 GHz / 0.7 dB at 5.8 GHz) and high maximum stable gain (27 dB at 1.8 GHz / 10 dB at 18 GHz). Unique features include high switching frequency fT 70 GHz and packaging in a plastic surface-mount package SOT343F.
Availability
NXP’s BFU725F microwave transistor is available now shipping in high volumes.
