EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon


The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

EPC - EPC2050

The EPC2050 is just 1.95 mm × 1.95 mm (3.72 mm2). Designers no longer have to choose between size and performance – they can have both! Given the tiny size of the EPC2050, a highly efficient half bridge with gate driver occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs.

Development Board

The EPC9084 development board is a 350 V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. This 2” × 1.5” (51 mm × 38 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350 V EPC2050 eGaN FET.

The EPC9084 Development Board
The EPC9084 Development Board.

Price and Availability

The EPC2050 eGaN FET is priced for 1K units at $3.19 each and the EPC9084 development board is priced at $118.75 each.

Both products are available for immediate delivery from Digi-Key.

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