The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48 V power converters, LiDAR, and LED lighting.
Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1 mm2 footprint.
Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30 mm × 0.85 mm (1.1 mm2). Despite the small footprint, operating in a 50 V – 12 V buck converter, the EPC2051 achieves 97% efficiency at a 4 A output while switching at 500 kHz. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2051, is 30 times smaller than the closest silicon MOSFET.” said Alex Lidow, EPC’s CEO.
The EPC9091 development board is a 100 V maximum device voltage, half bridge featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor. This 2” × 2” (50.8 mm × 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2051 eGaN FET.
|EPC9091: 100 V, 5 A Half-Bridge Development Board.|
The EPC2051 eGaN FET is priced for 1K units at $0.67 each and $0.37 in 100K volumes and the EPC9091 development board is priced at $118.75 each.
Both products are available for immediate delivery from Digi-Key.
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