Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs
ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically intended for demanding automotive applications. The new AEC-Q101 automotive grade SiC diodes deliver the reliability and ruggedness needed by modern automotive applications, along with the numerous performance benefits synonymous with Wide Band Gap (WBG) technologies.
SiC technology provides superior switching performance and higher reliability compared to silicon devices. The diodes have no reverse recovery current, and switching performance is independent of temperature. Excellent thermal performance, increased power density and reduced EMI, as well as decreased system size and cost make SiC a compelling choice for the growing number of high-performance automotive applications.
ON Semiconductor’s new SiC diodes are available in popular surface mount and through-hole packages, including TO-247, D2PAK and DPAK. The FFSHx0120 1200 Volt (V) Gen1 devices, and FFSHx065 650 V Gen2 devices offer zero reverse recovery, low forward voltage, temperature independent current stability, extremely low leakage current, high surge capacity and a positive temperature coefficient. They deliver improved efficiency while the faster recovery increases switching speeds, thereby reducing the size of magnetic components required.
In order to meet the robustness requirements and perform reliably in the harsh electrical environments of automotive applications, the diodes have been designed to withstand high surge currents. They also include a unique, patented termination structure that improves reliability and enhances stability. Operating temperature range is –55 °C to +175 °C.
