Ampleon announces the release of a new high-efficiency GaN-based 2.4 GHz RF power amplifier lineup, designed for industrial, scientific, medical (ISM) applications. Delivering up to 350 W continuous wave (CW) output, this solution provides OEMs and RF system designers with a compact, rugged alternative to traditional magnetron-based systems.
At the core of the design are Ampleon’s CLF24H4LS300P (final stage) and CLP24H4S30P (driver), both based on advanced GaN-on-SiC HEMT technology. Covering the full 2.4 to 2.5 GHz ISM band, the dual-stage architecture achieves more than 66 % drain efficiency, helping to reduce power consumption and simplify thermal management in demanding environments.
“This new 2.4 GHz CW GaN solution is engineered for the next generation of solid-state RF power applications,” said Houssem Schuick, Senior Director Product Marketing Management at Ampleon. “It offers system integrators a reliable, high-throughput platform that meets growing demand for precise power control, long service life, and low-maintenance RF systems. With Ampleon’s GaN-on-SiC technology and optimized reference designs, OEMs can accelerate development across applications, such as industrial heating, medical therapies, plasma generation, microwave chemistry, MW-PECVD processes, and solid-state cooking, including combi oven systems.”
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| Two stages amplifier AR241030. |
The line-up amplifier’s internally matched 50-ohm input/output, onboard analog temperature sensor, surface mount circulator and directional coupler enable real-time monitoring and system-level protection. With a compact footprint of just 105 × 33 mm, it supports easy integration into space-constrained environments and ensures robust performance under mismatch conditions up to 20:1 VSWR at 50 V.
The CLF24H4LS300P and CLP24H4S30P line-up is available now through Ampleon and authorized distribution partners.