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Search results: 212   Output: 71-80
  1. NXP and five major partners (E.G.O. Elektro-Gerätebau GmbH, Huber+Suhner, ITW, Rogers Corporation and Whirlpool Corporation) have formed the RF Energy Alliance to spearhead the ecosystem for emerging RF Energy applications. Together, the ...
    RF » NXP » RF Energy
    12-10-2014
  2. PTVA030121EA , PTVA120251EA and PTVA120501EA , the newest members of Infineon's 50 V LDMOS RF power transistor family, are designed to deliver excellent ruggedness, high efficiency and high gain. The PTVA030121EA is an unmatched transistor capable ...
    RF · Wireless » Infineon » PTVA030121EA, PTVA120251EA, PTVA120501EA
    04-10-2014
  3. PTAC240502FC is the latest addition to Infineon's RF LDMOS transistors for applications in the 2300-2400 MHz frequency band. This device provides two asymmetric paths (17 W+33 W) enabling high-efficiency and compact Doherty amplifier designs. With ...
    RF · Wireless » Infineon » PTAC240502FC
    02-10-2014
  4. Designers building Bluetooth Smart® devices or modules can accelerate project completion, maximize system performance, and minimize solution size using STMicroelectronics ’ new integrated balun, the BALF-NRG-01D3 . As a companion chip to ...
    RF · Wireless » STMicroelectronics » BALF-NRG-01D3
    01-10-2014
  5. IDT’s Latest RF Signal Path Solution Features Zero-Distortion™ Technology to Deliver Industry’s Lowest Power Consumption Modulator Integrated Device Technology introduced a new IQ modulator that delivers the industry’s ...
    RF · Wireless » IDT » IDTF1650
    29-07-2014
  6. Analog Devices , Inc. announced a low-power radio transceiver featuring a set of configuration profiles that allow radio performance optimization, reducing system development time and shortening time-to-market by months. The ADF7024 transceiver is ...
    RF · Wireless » Analog Devices » ADF7024
    26-06-2014
  7. Mini-Circuits’ new TSS-53LNB+ ultra-wideband, low noise bypass amplifier achieves a new level of performance to meet your MMIC amplifier needs for applications from commercial wireless and instrumentation to military and more! This ...
    RF · Wireless » Mini-Circuits » TSS-53LNB+
    12-06-2014
  8. NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    RF · Discretes » NXP » LDMOS RF, BLC9G27LS-150 AV
    08-06-2014
  9. Infineon has launched a new line of 2.6 GHz LDMOS transistors that support LTE applications. The new transistors offer excellent gain, high efficiency and high peak power. They cover a wide range of output powers from 25 W to 280 W and are ...
    RF » Infineon » PTFC260202FC, PTAC260302FC, PTFC261402FC, PTFC262157FH, PTFC262808FV
    01-06-2014
  10. Mini-Circuits MMIC amplifier line continues to grow with the release of the VNA-28A+ high-directivity MMIC amplifier. This model covers 500 2500 MHz with 18 dB typical directivity, making it suitable as a low cost isolator to minimize the ...
    RF » Mini-Circuits » VNA-28A+
    04-05-2014
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