Vishay Intertechnology introduced a new -30 V, 12 V VGS p-channel TrenchFET® power MOSFET in the ultra-compact, thermally enhanced PowerPAK® SC-70 package. With the industry's lowest on-resistance at -4.5 V and -2.5 V gate drives for a -30 V device in the 2 mm by 2 mm footprint area, the SiA453EDJ is designed to save space and increase power efficiency in portable electronics.
The -30 V VDS of the Vishay Siliconix device released today provides the headroom needed for over-voltage spikes, while its 12 V VGS enables lower on-resistance ratings of -3.7 V and -2.5 V for ultra-portable, battery-operated applications. The MOSFET is optimized for load and input over-voltage protection switches, battery chargers, and DC/DC converters in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, hard disk drives, and handheld consumer electronics including electric toothbrushes, shavers, scanners, and RFID readers. For these applications, the SiA453EDJ offers extremely low on-resistance of 18.5 mΩ (-10 V), 23.5 mΩ (-4.5 V), 26.0 mΩ (-3.7 V), and 37.7 mΩ (-2.5 V), and provides built-in ESD protection of 4000 V.
The SiA453EDJ's on-resistance at -4.5 V is 36% lower than the closest competing -30 V device, and 50% lower than the closest competing device with a 12 V VGS. The MOSFET's on-resistance at -2.5 V is 46% lower than the next-best 12 V VGS device. These industry-low values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while the device's compact PowerPAK SC-70 package saves critical PCB space.
The MOSFET is 100 % Rg and UIS tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
