Reduced on-resistance resulting from the use of a new, small, low-resistance package
Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to the automotive 40 V N-channel power MOSFET series. The TPHR7904PB and TPH1R104PB are AEC-Q101 qualified and are intended for a variety of automotive applications including Electric Power Steering (EPS), load switches, electric pumps, fans and more.
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide on-resistance (RDS(ON)) as low as max 0.79 mΩ at VGS = 10 V, thereby reducing conduction losses. The devices specified with a Drain-Source voltage (VDSS) of 40 V and can handle drain currents (ID) up to 150 A DC. The U-MOS IX-H design also lowers switching noise, helping to reduce electromagnetic interference (EMI).
