Efficient dual device is ideal for automotive headlight applications
Toshiba Electronics Europe has released a dual MOSFET with high levels of ESD protection. The new SSM6N813R is intended for use in rugged automotive applications, including use as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint.
A maximum drain-source voltage (VDSS) of 100 V ensures that the SSM6N813R is suitable for headlight applications requiring multiple LEDs, a capability supported by the device’s high levels ESD immunity. Fabricated using the latest process, the SSM6N813R has a maximum power dissipation of 1.5 W and offers efficient operation through low on-resistance (RDS(ON)) of just 112 mΩ. The devices can support drain currents (ID) up to 3.5 A.
|The SSM6N813R Pin Assignment.|
The dual MOSFETs are packaged in a tiny TSOP6F package that measures just 2.9 mm × 2.8 mm × 0.8 mm, the same size as a SOT23 package and giving a footprint that is 70% smaller than that of an SOP8 package. The device is in mass production.
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