Toshiba releases small MOSFET with excellent ESD protection

Toshiba SSM6N813

Efficient dual device is ideal for automotive headlight applications

Toshiba Electronics Europe has released a dual MOSFET with high levels of ESD protection. The new SSM6N813R is intended for use in rugged automotive applications, including use as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint.

Toshiba - SSM6N813

A maximum drain-source voltage (VDSS) of 100 V ensures that the SSM6N813R is suitable for headlight applications requiring multiple LEDs, a capability supported by the device’s high levels ESD immunity. Fabricated using the latest process, the SSM6N813R has a maximum power dissipation of 1.5 W and offers efficient operation through low on-resistance (RDS(ON)) of just 112 mΩ. The devices can support drain currents (ID) up to 3.5 A.

The SSM6N813R Pin Assignment
The SSM6N813R Pin Assignment.

The dual MOSFETs are packaged in a tiny TSOP6F package that measures just 2.9 mm × 2.8 mm × 0.8 mm, the same size as a SOT23 package and giving a footprint that is 70% smaller than that of an SOP8 package. The device is in mass production.

JLCPCP: 2USD 2Layer 5PCBs, 5USD 4Layer 5PCBs

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