New Series of High-Side/Low-Side Gate Drivers from Diodes Incorporated Delivers Higher Performance in an SO-8 Package

Diodes DGD2003S8 DGD2005S8 DGD2012S8

Diodes Incorporated announced a new family of high-voltage, high-speed gate drivers for converters, inverters, motor control, and Class-D power amplifier applications. These devices are suitable for motor drive applications up to 100 V, and simultaneously able to support power conversion and inversion applications operating at 200 V. These features make them well-suited for a number of consumer and industrial designs, including power tools, robotics and drones, as well as small electric vehicles.

Diodes - DGD2003S8, DGD2005S8, DGD2012S8

The DGD2003S8, DGD2005S8, and DGD2012S8 are 200 V gate drivers covering half-bridge and high-side/low-side topologies, offered in the standard low-profile SO-8 package. These devices feature junction isolated level-shift technology to create a floating channel high-side driver for use in a bootstrap topology operating at up to 200 V, with the ability to drive two N-channel MOSFETs in a half-bridge configuration.

All devices in the series feature standard TTL/CMOS logic inputs with Schmitt triggering and are able to operate down to 3.3 V, making it simple to interface the drivers to control circuitry. The outputs are designed to withstand negative transients and include undervoltage lock-out for high-side and low-side drivers.

With a source and sink current of 290 mA and 600 mA, respectively for the DGD2003S8 and DGD2005S8, and 1.9 A and 2.3 A, respectively for the DGD2012S8, power efficiency is maintained across the range. The DGD2003S8 features a fixed internal deadtime of 420 ns, while the DGD2005S8 has a maximum propagation time of 30 ns when switching between high-side and low-side.

The DGD2003S8, DGD2005S8 and DGD2012S8 are available in the SO-8 package and operate across an extended temperature range of –40 °C to +125 °C.

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