Diodes Incorporated has introduced the first MOSFETs in a new range of space-saving DFN3020 packaged discrete products. Three dual MOSFET combinations have been released, comprising 20V and 30V N-channel and 30V complementary devices. These include the ZXMN2AMC (dual 20V N-channel), ZXMN3AMC (dual 30V N-channel), and ZXMC3AMC (complementary 30V) DFN3020 packaged MOSFETs. While offering a comparable electrical performance as much larger SOT23 packaged parts, these dual DFN3020 MOSFETs will replace two separate SOT23 packaged MOSFETs, resulting in a board space saving of 70%.
With a footprint of just 6mm2 and an off-board height of 0.8mm, some 40% less than SOT23 or TSOP-6 packaged parts, the DFN3020 MOSFET portfolio will suit load switch or boost conversion circuits in space-constrained low profile portable consumer electronics including tablets and netbooks. The complementary DFN3020 MOSFETs will also function well as a half bridge for driving motor loads in industrial applications.
The MOSFETs' junction to ambient thermal resistance of 83°C/W also means that power dissipation is high, at up to 2.4W continuous and operating temperatures are cooler than achievable with SOT23 packaged MOSFETs leading to increased reliability.
Product Overview Specs
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Part Number
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N
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P
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Type
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N
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N
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N + P
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| Case | DFN3020B-8 | |||
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ESD Diode Y/N
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N
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N
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N
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N
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VDS
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20 V
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30 V
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30 V
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–30 V
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VGS
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±12 V
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±20 V
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±20 V
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IDS @ TA = 25ºC
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3.7 A
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3.7 A
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3.7 A
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–2.7 A
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PD @ TA = 25ºC
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2.45 W
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RDS(on) Max @ VGS = 10 V
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120 mΩ
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120 mΩ
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210 mΩ
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RDS(on) Max @ VGS = 4.5 V
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120 mΩ
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180 mΩ
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180 mΩ
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330 mΩ
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RDS(on) Max @ VGS = 2.5 V
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300 mΩ
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Ciss typ. @ VDS = 10V
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299 pF
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190 pF
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190 pF
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206 pF
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Qg typ. @ VGS = 4.5V
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3.1 nC
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2.3 nC
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2.3 nC
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3.8 nC
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Qg typ. @ VGS = 10V
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3.9 nC
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3.9 nC
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6.4 nC
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