650V SiC thinQ! Generation 5 Diodes

Infineon thinQ!

thinQ!™ Generation 5 is Infineon’s leading-edge technology for SiC Schottky Barrier diodes.

The company has combined its proprietary diffusion soldering process, launched with G3, with a new, more compact design and thin wafer technology. The resulting new family of products delivers greater efficiency over all load conditions thanks to improved thermal properties and a lower figure of merit (Qc × Vf).

Infineon - ThinQ!

thinQ!™ Generation 5 has been designed to complement Infineon´s 650V CoolMOS™ families, thus ensuring compliance with the most stringent application requirements in this voltage range.

Infineon - ThinQ!
Experimental results:
Efficiency comparison between the three generations of Infineon's 8A SiC Diodes
a) Absolute values
b) Refers to thinQ!™ Gen 5
(CCM PFC, high line, Pout max=1800 W, fSW=65 kHz, THS=60°C, MOSFET: IPW60R075CP)

Features

  • Vbr at 650V
  • Improved figure of merit (Qc × Vf)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature-independent switching behavior
  • High operating temperature (Tj max 175°C)
  • Improved surge capability
  • Pb-free lead plating
  • 10 years experience in manufacturing SiC diodes

Applications

  • Telecom/server SMPS
  • Solar/UPS
  • PC silverbox
  • LED/LCD TV
  • Motor drives
  • HID lighting

infineon-designlink.com

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