Negligible reverse recovery current, high surge capability, and 175 °C max. operating junction temperature
Littelfuse introduced two second-generation series of 650 V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6 A, 8 A, 10 A, 16 A or 20 A). They offer power electronics system designers a variety of performance advantages, including negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C, so they are ideal for applications that require enhanced efficiency, reliability, and thermal management.
When compared to standard silicon PN-junction diodes, the 650 V Series SiC Schottky Diodes support dramatic reductions in switching losses and substantial increases in the efficiency and robustness of a power electronics system. Because they dissipate less energy and can operate at higher junction temperatures than Si-based solutions, they allow for smaller heat sinks and a smaller system footprint. This provides end-users with all the advantages of more compact, energy-efficient systems and the potential for a lower total cost of ownership.
Typical applications for 650 V Series SiC Schottky Diodes include:
The 650 V Series SiC Schottky Diodes offer these key benefits:
LSIC2SD065CxxA Series SiC Schottky Diodes are available in TO-252-2L (DPAK) packages, in tape and reel format, with a minimum order quantity of 2,500 devices. LSIC2SD065AxxA Series SiC Schottky Diodes are available in TO-220-2L packages, with 50 devices packed in a tube, with a minimum order quantity of 1,000 pieces. Sample requests may be placed through authorized Littelfuse distributors worldwide.
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