ON Semiconductor Announces New Full Silicon Carbide MOSFET Module Solutions for Charging Electric Vehicles at APEC 2021

ON Semiconductor NXH010P120MNF1 NXH006P120MNF2

ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market.

ON Semiconductor - NXH010P120MNF1,  NXH006P120MNF2

As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of drivers, providing a network of rapid charging stations that will allow them to complete their journeys quickly and without ‘range anxiety’. Requirements in this sector are rapidly evolving, requiring power levels in excess of 350 kW and efficiencies of 95% becoming the ‘norm’. Given the diverse environments and locations in which these chargers are deployed, compactness, robustness and enhanced reliability are all challenges that designers face.

The new 1200 V M1 full SiC MOSFET 2 pack modules, based upon planar technology and suited to a drive voltage in the range of 18-20 V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared to trench trench MOSFET, thereby reducing die temperature at the same operating temperature.

Configured as a 2-PACK half bridge, the NXH010P120MNF1 is a 10 mohm device housed in an F1 package while the NXH006P120MNF2 is a 6 mohm device in an F2 package. The packages feature press-fit pins making them ideal for industrial applications and an embedded negative temperature coefficient (NTC) thermistor facilitates temperature monitoring.

As part of the ON Semiconductor EV charging ecosystem, the new SiC MOSFET modules have been designed to work alongside driver solutions such as the NCD5700x devices. The recently introduced NCD57252 dual channel isolated IGBT/MOSFET gate driver offers 5 kV of galvanic isolation and can be configured for dual low-side, dual high-side or half-bridge operation.

The NCD57252 is housed in a small SOIC-16 wide body package and accepts logic level inputs (3.3 V, 5 V & 15 V). The high current device (source 4.0 A / sink 6.0 A at Miller plateau voltage) is suitable for high-speed operation as typical propagation delays are 60 ns.

The recently-announced 650 V SiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling a best-in-class figure of merit (FoM) for (RDS(on) ×area). Devices in the series such as the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC offer the lowest RDS(on) in the market for D2PAK7L / TO247 packaged MOSFETs.

The 1200 V and 900 V N-channel SiC MOSFETs feature a small chip size that reduces device capacitance and gate charge (Qg – as low as 220 nC), reducing switching losses when operating at the high frequencies demanded by EV chargers.

1-4 Layer PCBs $2

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