EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm × 5 mm QFN package, offering higher power density for DC-DC conversion, fast charging, motor drives, and solar MPPTs.
EPC launches the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.
The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package with exposed top and tiny, 3 mm × 5 mm, footprint. The maximum RDS(on) × Area of the EPC2361 is 15 mΩ·mm2 – over five times smaller than comparable 100 V silicon MOSFETs.
With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This breakthrough is particularly significant for applications such as high-power PSU AC-DC synchronous rectification, high frequency DC-DC conversion for data centers, motor drives for eMobility, robotics, drones, and solar MPPTs.
Development board
The EPC90156 development board is a half bridge featuring the EPC2361 GaN FET. It is designed for 100 V maximum device voltage and xx A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” × 2” (50.8 mm × 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
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| The EPC90156 development board. |
Price and availability
The EPC2361 is priced at $4.60 each in 3 Ku volumes.
The EPC90156 development board is priced at $200.00 each.
