News & Press Releases - Power - 2

ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure ...

UnitedSiC continues to expand its FET portfolio with the introduction of six new 650 V and 1200 V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150 mΩ versions, these latest SiC FETs ...

Vishay Intertechnology introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally ...

Highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies introduces its latest isolated EiceDRIVER™ 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver ...

Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies adds the new ...

The STMicroelectronics MasterGaN4 power packages integrate two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ R DS(on) , alongside optimized gate drivers and circuit protection to simplify the design of high-efficiency ...

For Infrastructure, Cloud Computing, and Graphic Cards Applications, Devices Feature Integrated Current and Temperature Monitoring in PowerPAK® 5 mm × 6 mm Package Vishay Intertechnology introduced nine new 70 A, 80 A, and 100 A ...

The new compact SMD TOLL format helps reduce the size of equipment and the Kelvin source connection improves efficiency Toshiba Electronics Europe has announced five 650V superjunction power MOSFETs housed in the new compact SMD package in ...

Infineon Technologies has launched StrongIRFET™ 2 the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an ...

Space-saving LFPAK56D half-bridge offers 60% lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application Nexperia announced a series of half-bridge (high side low side) automotive MOSFETs ...