News & Press Releases - RF - 9

AT T and Verizon-certified cellular modem with voice and data offers future-proof, high speed, always-on connectivity The versatile TOBY-L201 module offers best-in-class download speeds up to 150 Mbps and comes in a miniature 24.8 × 35.6 mm ...

NXP Semiconductors announced the new Mantra RF portfolio a family of high-performance transceivers and receivers for secure car access and vehicle management. The chip family offers a long-range, two-way RF link that enables robust bi-directional ...

Analog Devices introduced a medium-power, distributed driver amplifier which operates between 24 and 35 GHz. The HMC1131 amplifier provides 22-dB of gain, +35-dBm output IP3, and +24 dBm of output power at 1-dB gain compression. The new amplifier ...

e2v’s next generation DAC, the EV12DS400, brings an advanced combination of microwave capabilities and multi-Nyquist operation, and is now ready for general sampling. The EV12DS400 offers the highest levels of spectral purity, coupled with a ...

Patented FreeFlex™ RF-MEMS technology is designed to significantly outperform current RF switch designs to deliver the operational performances needed for next generation LTE-A handsets DelfMEMS has announced that its world leading, twelve ...

Linear Technology announces the LTC5549, a double-balanced mixer that can operate either as an upconverter or downconverter, with a very wide RF frequency range from 2 GHz to 14 GHz. The LTC5549 offers exceptionally high linearity of 24.4 dBm IIP3 ...

Analog Devices , Inc. introduced the HMC1127 and the HMC1126 MMIC (Monolithic Microwave Integrated Circuit) distributed power amplifiers. Covering the frequency range of 2-50 GHz, these new power amplifier die simplify system design and improve ...

MicroWave Technology, Inc. a division of IXYS Corporation released two pre-amplifiers for MRI coil applications. The MSM series pre-amp has a 0.45 dB noise figure and a 28 dB gain at 1.5T (64 MHz), 3T (123-128 MHz), and 7T (298 MHz) frequencies. It ...

Freescale Semiconductor introduced two new broadband RF power amplifiers - the new Airfast AFIC901N LDMOS RF integrated device and the AFT05MS003N LDMOS transistor. The products can be operated at 3.6 or 7.5 V and are targeted for applications ...

Cree , Inc. has introduced two industry-leading GaN HEMT (high-electron-mobility transistor) devices that solve a number of long-standing issues for radar systems employing traditional travelling-wave-tube (TWT) amplifiers. GaN-based solid-state ...