NXP Introduces Industry's First Bipolar Transistors in LFPAK56 (Power SO-8)


NXP Semiconductors introduced the first bipolar transistors in the 5 × 6 × 1 mm low profile LFPAK56  (SOT669) SMD power plastic package. The new portfolio consists of six 60 V and 100 V low saturation transistors with a collector current of up to 3 A (IC) and a peak collector current (ICM) of up to 8 A. The new types boost power dissipation capabilities of 3 W (Ptot) and low VCEsat values – a thermal and electrical performance comparable to bipolar transistors in much larger power packages such as DPAK, on less than half the footprint.


The solid copper clip and collector tab design of the NXP LFPAK package is the basis for achieving this high power density, as it reduces the package’s electrical and thermal resistance significantly. The LFPAK also eliminates wire-bonding used in many competitor DPAK types, enabling NXP to deliver higher mechanical ruggedness and reliability.

The new LFPAK56 bipolar transistors are AEC-Q101 qualified and suitable for a wide range of automotive applications in an ambient temperature of up to 175°C. Backlighting, motor drive and general power management applications are further areas of use for these new low VCEsat transistors. The new bipolar transistor portfolio will be extended over the course of the year with double transistors in LFPAK56D and high current types with 6, 10 and 15 A in LFPAK56.


  • The new bipolar low VCEsat transistors in LFPAK56 are available immediately in high-volume production, including product types PHPT60603NY /PHPT60603PYPHPT61003NY/ PHPT61003PY, and PHPT61002NYC/ PHPT61002PYC.
  • The double transistors in LFPAK56D and high current single types with 6, 10 and 15 A will be released from Q2 2014 onward.


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