Bipolar Transistors from Diodes Incorporated Feature a 3.3mm x 3.3mm Package and Enable Higher Power Density

Diodes

Diodes Incorporated announced a family of NPN and PNP power bipolar transistors in a small form factor (3.3 mm × 3.3 mm), offering increased power density for applications requiring up to 100 V and 3 A. Featuring a smaller form factor, these NPN and PNP transistors enable higher power density designs in gate-driving power MOSFETs and IGBTs, linear DC-DC step-down regulators, PNP LDOs, and load switch circuits.

Bipolar Transistors from Diodes Incorporated Feature a 3.3mm x 3.3mm Package and Enable Higher Power Density

Targeted at both industrial and consumer markets, the DXTN07xxxxFG (NPN) and DXTP07xxxxFG (PNP) series range from 25 V to 100 V VCEO; they also feature total power dissipation of 2 W and are rated up to +175 °C operation. The transistors are housed in the compact PowerDI®3333 surface mount package measuring just 3.3 mm × 3.3 mm × 0.8 mm, occupying 70% less PCB space than the traditional SOT223, while delivering similar power dissipation in a more thermally efficient package.

The PowerDI3333 package increases PCB throughput by featuring wettable flanks, which help facilitate the high-speed, automatic optical inspection (AOI) of solder joints, thus eliminating the need for X-ray inspection.

The full range of DXTN07xxxxFG and DXTP07xxxxFG devices are sampling commercially with automotive qualification to be completed by end of Q1 2019. They are priced at $0.19 each in 5000 piece quantities.

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