News & Press Releases Discretes - 14

Subsection: "Discretes"
Search results: 393 Output: 131-140
  1. RF Discretes Ampleon BLCU188XRS
    Ampleon announced the availability of the BLCU188XRS, a 1400 W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package. Able to withstand extremely load mismatches, up ...
    28-07-2016
  2. Discretes Power Vishay SiHJ8N60E SiHJ6N65E SiHJ7N65E
    Vishay Intertechnology announced that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK® SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 ...
    11-07-2016
  1. Tiny LGA package is 80 percent smaller than traditional 60-V load switches Texas Instruments (TI) introduced a new 60-V N-channel FemtoFET power transistor that provides the industry's lowest resistance that is 90 percent below traditional 60-V ...
    22-06-2016
  2. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220FP (Full Pack) ...
    02-06-2016
  3. RF Discretes NXP MRF1K50H
    NXP Semiconductors introduced the most powerful RF transistor in any technology operating at any frequency. Designed to deliver 1.50 kW CW at 50V, the MRF1K50H can reduce the number of transistors in high-power RF amplifiers, which decreases ...
    15-05-2016
  4. Discretes Power Vishay SiHA21N65EF SiHB21N65EF SiHG21N65EF SiHH21N65EF SiHP21N65EF SiHG28N65EF SiHP28N65EF
    Vishay Intertechnology expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF , SiHx28N65EF , and ...
    15-05-2016
  5. Discretes Power ON Semiconductor NGTB40N120FL3WG NGTB25N120FL3WG NGTB40N120L3WG
    Setting new benchmarks in power efficiency for high power switching systems ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The ...
    13-05-2016
  6. RF Discretes NXP MMRF1312H/HS MMRF1314H/HS MMRF1317H/HS MMRF2010N/GN
    NXP Semiconductors set a new benchmark in RF power performance with four new LDMOS transistors. The new transistors aim to deliver best-in class performance for defense radar and identification friend or foe (IFF) systems operating between 900 and ...
    11-04-2016
  7. Superior Switching Performance Helps Manufacturers Meet Tough Energy Efficiency and EMI Regulations Fairchild released its first 1200 V silicon carbide (SiC) diode, the FFSH40120ADN , in its series of upcoming SiC solutions. The 1200 V ...
    25-03-2016
  8. Discretes Vishay VTVSxxASMF
    Vishay Intertechnology announced a new series of surface-mount transient voltage suppressor (TVS) protection diodes that are the industry’s first to feature a 2 % breakdown voltage tolerance. Offered in the low-profile SMF package, Vishay ...
    05-02-2016
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