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News: Discretes

Search results: 310   Output: 11-20
  1. Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650 V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as ...
    12-06-2018
  2. Industry’s only available devices compatible with Power-SO8 footprint to meet new standard for battery-powered equipment. Nexperia announced that two of its LFPAK56-packaged portfolio of MOSFETs are now available with improved creepage and ...
    Discretes · Power » Nexperia » PSMN0R9-30ULD, PSMN0R9-40ULD
    08-06-2018
  3. Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...
    Discretes · Power » Toshiba » TPHR7904PB, TPH1R104PB
    02-05-2018
  4. GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and ...
    Discretes · Power » GaN Systems » GS-010-120-1-T
    26-04-2018
  5. The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and ...
    Discretes · Power » EPC » EPC2050
    25-04-2018
  6. New devices combine high efficiency and low noise Toshiba Electronics Europe announced the launch of a new series of 600 V planar MOSFETs known as “π-MOS IX”. The new series is aimed at small to medium switching power supplies such ...
    Discretes · Supply » Toshiba » TK1K9A60F, TK1K2A60F, TK750A60F, TK650A60F
    28-03-2018
  7. GaN Systems made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The ...
    Discretes · Power » GaN Systems » GS-065-120-1-D
    13-03-2018
  8. High-performance diodes protect USB and power supply interfaces in mobile devices Toshiba Electronics Europe has announced a new series of TVS diodes that protect USB power lines and power supply connectors used in mobile devices. Toshiba’s ...
    11-03-2018
  9. Optimal power efficiency using latest package technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced AONE36132 , a 25 V N-Channel MOSFET in a dual DFN 3.3 × 3.3 package which is ...
    Discretes · Power » Alpha & Omega » AONE36132
    15-02-2018
  10. Diodes Incorporated announced its most advanced dataline transient voltage suppressor (TVS) ever, the DESD3V3Z1BCSF-7 . Designed to provide exceptional TVS/ESD protection to the high-speed input/output ports of advanced systems-on-chips (SoCs) ...
    Discretes » Diodes » DESD3V3Z1BCSF-7
    14-02-2018
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