News & Press Releases Discretes - 2

Subsection: "Discretes"
Search results: 316 Output: 11-20
  1. Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically ...
    19-09-2018
  2. The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48 V power converters, LiDAR, and LED lighting. ...
    13-09-2018
  3. New devices increase power supply efficiency even further Toshiba Electronics Europe has launched a new series of next-generation 650 V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, ...
    22-08-2018
  4. Discretes Torex XBP06V0U25R-G
    Torex Semiconductor has launched the XBP06V0U25R-G as a new series of transient voltage suppressors (TVS). The XBP06V0U25R-G series of products are mounted in close proximity to an external interface to protect downstream ICs from electrostatic ...
    21-08-2018
  1. Infineon Technologies is launching a new 1200 V IGBT generation TRENCHSTOP™ IGBT6. It is the first discrete IGBT duopack on the market manufactured on 12 inch wafer size. The new IGBT technology is designed to fulfill the increasing customer ...
    07-08-2018
  2. Optimal power efficiency using the latest technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced the AONX38168 , which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET ...
    11-07-2018
  3. Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650 V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as ...
    12-06-2018
  4. Discretes Power Nexperia PSMN0R9-30ULD PSMN0R9-40ULD
    Industry’s only available devices compatible with Power-SO8 footprint to meet new standard for battery-powered equipment. Nexperia announced that two of its LFPAK56-packaged portfolio of MOSFETs are now available with improved creepage and ...
    08-06-2018
  5. Discretes Power Toshiba TPHR7904PB TPH1R104PB
    Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...
    02-05-2018
  6. Discretes Power GaN Systems GS-010-120-1-T
    GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and ...
    26-04-2018