Robust, versatile solution for USB PD load switch applications with extended input voltage range
Alpha and Omega Semiconductor (AOS) introduced AONR21357, the initial product in this P-Channel family. The new AONR21357 uses the improved P-Channel MOSFET process to achieve low power loss and reliable startup. The new device rated at –30 V drain-source breakdown voltage (BVDSS) and –25 V gate-source voltage. It features a maximum on-resistance (RDS(ON)) of 12.3 mOhm under VGS = –4.5 V, and a thermally enhanced 3×3 mm DFN package. The new P-Channel MOSFET is ideal for load switch applications in Notebook Adapter-In/ Battery In sockets.
USB Type-C is becoming the de-facto interface for the latest PCs and mobile designs. With that, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy. The new MOSFET used as the load switch offers extended input/output voltage range, and is robust and reliable enough to accommodate the possible working conditions. AOS' enhanced P-Channel technology offers robustness toward linear mode operation, and low Miller's Plateau (<3.5 V) to cover the possible USB-PD voltages.
The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks. The unit price of 1,000 pieces is $0.60.
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