Infineon Technologies has launched StrongIRFET™ 2 the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an ...
Space-saving LFPAK56D half-bridge offers 60% lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application Nexperia announced a series of half-bridge (high side low side) automotive MOSFETs ...
Superior switching and improved reliability deliver power density improvements in a variety of challenging applications ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power ...
Infineon Technologies introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION™ Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based ...
66% more power GaNFast IC takes a bigger bite from the old, slow silicon chip market. Navitas Semiconductor announced the NV6128 , a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics ...
Industry-First Device in Compact 5 mm × 6 mm PowerPAK® SO-8L Package With Gullwing Leads Offers On-Resistance Down to 30 mΩ Vishay Intertechnology introduced a new AEC-Q101 qualified p-channel 100 V TrenchFET® MOSFET designed to ...
Alpha and Omega Semiconductor announced the release of, AOTL66518 and AOB66518L , a 150 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability designed for demanding applications in Telcom Hot Swap. AOS designed these ...
Infineon Technologies has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS™ Maxi IPM IM828 series is the industry’s first ...
Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...
Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...