News & Press Releases - Power - 3

Subsection: "Power"
Search results: 978 Output: 21-30
  1. Discretes Power ON Semiconductor NVBG015N065SC1 NTBG015N065SC1 NVH4L015N065SC1 NTH4L015N065SC1
    Superior switching and improved reliability deliver power density improvements in a variety of challenging applications ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power ...
    Feb 22, 2021
  2. Drivers Power Infineon IMD111T IMD112T
    Infineon Technologies introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION™ Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based ...
    Feb 18, 2021
  1. 66% more power GaNFast IC takes a bigger bite from the old, slow silicon chip market. Navitas Semiconductor announced the NV6128 , a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics ...
    Feb 16, 2021
  2. Industry-First Device in Compact 5 mm × 6 mm PowerPAK® SO-8L Package With Gullwing Leads Offers On-Resistance Down to 30 mΩ Vishay Intertechnology introduced a new AEC-Q101 qualified p-channel 100 V TrenchFET® MOSFET designed to ...
    Jan 13, 2021
  3. Discretes Power Alpha & Omega AOTL66518 AOB66518L
    Alpha and Omega Semiconductor announced the release of, AOTL66518 and AOB66518L , a 150 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability designed for demanding applications in Telcom Hot Swap. AOS designed these ...
    Dec 29, 2020
  4. Infineon Technologies has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS™ Maxi IPM IM828 series is the industry’s first ...
    Dec 10, 2020
  5. Discretes Power Vishay SiHH070N60EF
    Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...
    Dec 7, 2020
  6. RF Discretes Power Ampleon BLP2425M10S250P
    Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...
    Nov 30, 2020
  7. EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification. Efficient ...
    Nov 22, 2020
  8. Discretes Power Infineon IQE013N04LM6 IQE013N04LM6CG
    Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies tackles this challenge by focusing on system innovation with enhancements on the component level. ...
    Nov 2, 2020