News & Press Releases Discretes - 15

Subsection: "Discretes"
Search results: 313 Output: 141-150
  1. Discretes X-REL XTR2N0307 XTR2N0325 XTR2N0350 XTR2N0525 XTR2N0550 XTR2N0807
    X-REL Semiconductor has broadened its XTR2N family of high-temperature MOSFET transistors by introducing two new mid-power P-channel and two small-signal P- and N-channel transistors. Intended for high-reliability, extreme temperature and extended ...
    09-07-2014
  2. Vishay Intertechnology announced that it has extended its RCL e3 series of long side termination thick film chip resistors with new devices in the 0406 and 1225 case sizes. For automotive electronic circuits and general purpose applications, the ...
    03-07-2014
  3. Infineon Technologies expands the comprehensive SiC portfolio introducing the 5th generation 1200 V thinQ! ™ SiC Schottky diodes. The new 1200 V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 ...
    25-06-2014
  4. Discretes NXP PMXB65UPE PMXB75UPE
    NXP enlarges its small-signal MOSFETs portfolio with two new medium power P-channel MOSFETs in the ultra small, leadless package DFN1010D-3 (SOT1215) with solderable side pads. PMXB65UPE and PMXB75UPE offer a drain current of up to 3.2 A, ...
    24-06-2014
  1. Discretes Power International Rectifier IRF7739L1TRPBF IRF7749L1TRPBF IRF7748L1TRPBF IRF7759L2TRPBF IRF7769L1TRPBF IRF7779L2TRPBF
    International Rectifier introduced the introduction of a family of Large Can DirectFET® MOSFETs for industrial applications requiring ultra-low on-state resistance (R DS(ON) ) including high power DC motors, DC/AC inverters, and high current ...
    19-06-2014
  2. Discretes NXP PMEG6010ELR PMEG6020ELR
    NXP introduces the first two 60 V low leakage Schottky barrier rectifiers in the FlatPower SOD123W package. PMEG6010ELR and PMEG6020ELR offer a reverse voltage of 60 V and average forward currents of 1 A and 2 A. They also offer a low reverse ...
    16-06-2014
  3. Discretes Power Microsemi APT40SM120B APT40SM120J APT50SM120B APT50SM120J
    Microsemi Corporation introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These ...
    10-06-2014
  4. RF Discretes NXP LDMOS RF BLC9G27LS-150 AV
    NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    08-06-2014
  5. Discretes Power Coilcraft 1010VS 1212VS 2014VS
    Coilcraft ’s new VS Series air core inductors combine current ratings of up to 57.0 Amps and excellent Q factors, making them ideal for high current IF/RF applications. Other applications include high power filtering, high frequency VRMs ...
    03-06-2014
  6. Discretes NXP PDTB1xxxT PDTB1xxxU PDTD1xxxT PDTD1xxxU
    NXP extends its transistor portfolio by releasing 20 new 500 mA resistor equipped transistors (RETs) in SOT23 and SOT323 packages. Our product series PDTB1xxxT / PDTB1xxxU and PDTD1xxxT / PDTD1xxxU offer an output current capability of 500 mA, ...
    26-05-2014