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News: Discretes

Search results: 306   Output: 141-150
  1. NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    RF · Discretes » NXP » LDMOS RF, BLC9G27LS-150 AV
    08-06-2014
  2. Coilcraft ’s new VS Series air core inductors combine current ratings of up to 57.0 Amps and excellent Q factors, making them ideal for high current IF/RF applications. Other applications include high power filtering, high frequency VRMs ...
    Discretes · Power » Coilcraft » 1010VS, 1212VS, 2014VS
    03-06-2014
  3. NXP extends its transistor portfolio by releasing 20 new 500 mA resistor equipped transistors (RETs) in SOT23 and SOT323 packages. Our product series PDTB1xxxT / PDTB1xxxU and PDTD1xxxT / PDTD1xxxU offer an output current capability of 500 mA, ...
    Discretes » NXP » PDTB1xxxT, PDTB1xxxU, PDTD1xxxT, PDTD1xxxU
    26-05-2014
  4. Infineon releas Blade 3×3 is a discrete MOSFET package with 3.0 × 3.4 mm 2 package outline. This new and revolutionary Blade packaging concept raises the bar for high-performance power packages. The packaging technology does not use ...
    Discretes · Power » Infineon » Blade 3×3
    25-05-2014
  5. Vishay Intertechnology introduced the industry's first surface-mount, 4-terminal Power Metal Strip® current sensing resistors in the compact 2726 and 4026 case sizes to provide an operating temperature range to +275 C. The Vishay Dale WSLT2726 ...
    Discretes · Power » Vishay » WSLT2726, WSLT4026
    22-05-2014
  6. Vishay Intertechnology introduced a new series of through-hole single-in-line thin film resistors. For high accuracy in precision, high-voltage instrumentation and amplifiers, the Vishay Dale Thin Film HVPS devices feature high resistance values to ...
    Discretes » Vishay » HVPS1, HVPS2
    14-05-2014
  7. Lowest saturation voltage and superior switching performance enable higher efficiencies Alpha and Omega Semiconductor Limited (AOS) announced the release of AOK20B135D1 , the flagship device in its new 1350 V AlphaIGBT™ portfolio. The ...
    Discretes · Domestic · Power » Alpha & Omega » AOK20B135D1
    13-05-2014
  8. International Rectifier announced the expansion of its portfolio of energy-efficient 600 V insulated-gate bipolar transistors (IGBTs) in a variety of packages. The new rugged, reliable IRxx46xx Series of devices are optimized for a complete power ...
    Discretes · Power » International Rectifier » IRGR4607D, IRGS4607D, IRGB4607D, IRGR4610D, IRGS4610D, IRGB4610D, IRGS4615D, IRGB4615D, IRGS4620D, IRGB4620D, IRGP4620D, IRGS4630D, IRGB4630D, IRGP4630D, IRGP4640D, IRGP4660D, IRGP4690D, IRGPS46160D
    11-05-2014
  9. Vishay Intertechnology introduced the industry's first 150 V n-channel MOSFET in the compact, thermally enhanced PowerPAK® SC-70 package. Offering the industry's lowest on-resistance at 10 V in the 2 mm by 2 mm footprint area, the Vishay ...
    Discretes · Power » Vishay » SiA446DJ
    10-05-2014
  10. Vishay Intertechnology introduced a new universal edgewound power resistor. Providing a convenient drop-in replacement for competing solutions, the universal-mounted EDGU combines a high-reliability design with continuous duty operation up to 85 A ...
    Discretes · Power » Vishay » EDGU
    03-05-2014
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