News & Press Releases - Power - 5

Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D ...

GaNPower International is pleased to announce the release of two new GaNPower IC ( GPI8HINOIC and GPI8HIRGIC ) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input ...

General Electric GE is collaborating with the NASA Advanced Air Vehicles Program (AAVP) to enable the future of flight for large commercial aircraft with electric propulsion. The project team is developing a next generation motor-drive inverter ...

MAX22701E reduces overall system energy loss by 30 percent and improves system uptime with up to 3x higher CMTI performance With the MAX22701E isolated gate driver from Maxim Integrated Products designers of high-voltage/high-power systems can ...

Proven process, robust and scalable, ready for volume applications Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA , a very robust device with a gate-source voltage (V GS ) ...

Combining the flexibility of digital power with the responsiveness of analog algorithms, STMicroelectronics ’ STNRGPF12 dual-channel interleaved boost-PFC controller is easily configured and optimized using the Company’s eDesignSuite ...

Compared with traditional 3-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design supports an even loss distribution between semiconductor devices. Infineon Technologies utilizes the ANPC topology for its ...

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest R DS(ON) SiC MOSFET at 1200 V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler ...

Diodes Incorporated introduced the SBR10M100P5Q and SBR8M100P5Q . These automotive-compliant super barrier rectifier (SBR®) diodes employ patented and proprietary technology and can significantly reduce power loss and lower operating ...

The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands GaN Systems announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 ...