News & Press Releases Discretes - 4

Subsection: "Discretes"
Search results: 310 Output: 31-40
  1. Discretes Supply Vishay IHLP-1616BZ-0H
    IHLP-1616BZ-0H Devices Feature High Frequency Performance Up to 10 MHz with Lowest Losses of Any Composite Inductor at 1 MHz and Above Vishay Intertechnology introduced the first extended-frequency inductor in the low profile, high current ...
    18-09-2017
  2. Discretes Power SSDI SSR15C120D1
    SSDI is proud to release its latest silicon carbide (SiC) Schottky rectifiers, the SSR15C120D1 series. These 15 amp, 500 1200 volt devices replace the SSR05C100 series and offer higher output current, reverse voltage, and peak surge current (30 A) ...
    14-09-2017
  3. Engineered for superior switching and EMI performance Alpha and Omega Semiconductor announced the release of AOTF190A60L , the first product in the new αMOS5™ HV MOSFET platform. This device provides high-efficiency performance in an ...
    10-08-2017
  4. Discretes STMicroelectronics ESDZL5-1F4, ESDZV5-1BF4
    New miniature (0201-size) single-line ESD-protection diodes from STMicroelectronics quickly clamp transients to a voltage as low as 7 V, and handle 7 A peak pulse current, to provide superior protection and design flexibility for space-constrained ...
    24-07-2017
  1. Diodes Incorporated introduced the SDT series of Schottky diodes. Using an advanced deep-trench process, these devices deliver superior performance at similar or lower cost to planar-type Schottky diodes. The initial family of 29 devices, housed in ...
    18-07-2017
  2. Second generation platform passes AEC-Q101 tests for high power automotive applications Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first GaN ...
    07-06-2017
  3. Discretes Automotive Power STMicroelectronics STLD200N4F6AG, STLD125N4F6AG
    STMicroelectronics has introduced new MOSFET devices in the advanced PowerFLAT 5×6 dual-side cooling (DSC) package, enabling increased power density in automotive Electronic Control Units (ECUs). The new MOSFETs have already been chosen by ...
    30-05-2017
  4. A full range of 2 A-40 A 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature ...
    16-05-2017
  5. Discretes Vishay AEC-Q200
    Vishay Intertechnology introduced a new AEC-Q200 qualified inductor that is the industry’s first to offer a continuous current rating of 125 A. For automotive and industrial applications, the Vishay Dale IHXL-2000VZ-5A features a 190 A ...
    08-05-2017
  6. Device Features High 37.8 A Continuous Drain Current and On-Resistance Down to 8.4 mΩ in Compact PowerPAK® SC-70 Package Vishay Intertechnology introduced a new 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased ...
    11-04-2017