News & Press Releases Discretes - 5

Subsection: "Discretes"
Search results: 313 Output: 41-50
  1. A full range of 2 A-40 A 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature ...
    16-05-2017
  2. Discretes Vishay AEC-Q200
    Vishay Intertechnology introduced a new AEC-Q200 qualified inductor that is the industry’s first to offer a continuous current rating of 125 A. For automotive and industrial applications, the Vishay Dale IHXL-2000VZ-5A features a 190 A ...
    08-05-2017
  3. Device Features High 37.8 A Continuous Drain Current and On-Resistance Down to 8.4 mΩ in Compact PowerPAK® SC-70 Package Vishay Intertechnology introduced a new 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased ...
    11-04-2017
  4. Discretes Supply Power Diodes DMNH4015SSDQ DMTH6016LSDQ
    Diodes Incorporated introduced the DMNH4015SSDQ and DMTH6016LSDQ . Featuring low figure-of-merit on-resistance and gate charge specifications, these latest 40 V and 60 V dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling ...
    27-03-2017
  1. Diodes Incorporated introduced the D28V0H1U2P5Q at Embedded World 2017. Billed as the industry’s first unidirectional 1800 W automotive-compliant transient voltage suppressor (TVS), this device is designed to protect sensitive electronic ...
    22-03-2017
  2. Discretes Power Toshiba CCS15F40 CUS15F40 CBS10F40 CUS10F40 CTS05F40 CUS05F40
    Applications Include White LED Backlights, Liquid Crystal Displays Toshiba Electronics Europe expanded its extensive portfolio of diodes with the addition of six low reverse-current Schottky Barrier Diodes (SBDs). With a peak reverse voltage of 40 ...
    12-03-2017
  3. Discretes Power Mitsubishi BD20060S BD20060T
    Reduces power loss and physical size of power supply systems Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the ...
    12-03-2017
  4. Discretes Power Vishay SiHP065N60E
    Superjunction Device Provides Industry’s Lowest R DS(ON) ∙Q g FOM for Telecom, Industrial, and Enterprise Applications Vishay Intertechnology introduced the first device in its fourth generation of 600 V E Series power MOSFETs. ...
    10-02-2017
  5. Vishay Intertechnology introduced a new series of 250 W full-bridge hybrid planar transformers for avionics, industrial control, and alternative energy control applications. Featuring a unique winding structure, TPL-2516 series devices provide a ...
    20-12-2016
  6. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM2206-800LR is a 6 A, 800 V MOSFET in the TO-220 package. The low ...
    30-11-2016