EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification. Efficient ...
Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies tackles this challenge by focusing on system innovation with enhancements on the component level. ...
Device offers significantly reduced losses thereby increasing power solution efficiency Toshiba Electronics Europe has launched a 1200 V silicon carbide (SiC) MOSFET for high power industrial applications including 400 V AC input AC-DC power ...
The PA22 from Apex Microtechnology establishes a new benchmark in power amplifier performance for a variety of applications where high speed and short-term power dissipation is a must. With this device, designers are offered exceptional power ...
These new generation 200 V eGaN® FETs are ideal for 48 V OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters EPC advances the performance capability while lowering the ...
Alpha and Omega Semiconductor announced the release of, AONS32310 , a 30 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability which is ideally suited for demanding applications such as hot swap and e-fuse. A high SOA is ...
New GaNFast Power ICs with Integrated Cooling Pad Enable Even Faster Charging in Smaller Sizes Navitas Semiconductor announced a new range of 650 V-rated GaNFast power ICs in 6 × 8 mm PQFN packaging with a proprietary, integrated cooling pad ...
Efficient operation reduces power consumption of motor equipment Toshiba Electronics Europe has announced a high voltage intelligent power device intended for driving the motor within equipment such as air conditioners, air cleaners and pumps. With ...
Optimized temperature and switching behavior for high-efficiency applications Alpha and Omega Semiconductor (AOS) announced the release of the new 1200 V silicon carbide (SiC) αSiC MOSFET technology platform. Specifically targeting the ...
Flexible solid-state switches are ideally suited to automotive ECU applications Toshiba Electronics Europe has launched two new gate driver switch intelligent power devices (IPDs). Fully AEC-Q100 compliant, the TPD7106F and TPD7107F can be used to ...