Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...
GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and ...
The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and ...
New devices combine high efficiency and low noise Toshiba Electronics Europe announced the launch of a new series of 600 V planar MOSFETs known as “π-MOS IX”. The new series is aimed at small to medium switching power supplies such ...
GaN Systems made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The ...
High-performance diodes protect USB and power supply interfaces in mobile devices Toshiba Electronics Europe has announced a new series of TVS diodes that protect USB power lines and power supply connectors used in mobile devices. Toshiba’s ...
Optimal power efficiency using latest package technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced AONE36132 , a 25 V N-Channel MOSFET in a dual DFN 3.3 × 3.3 package which is ...
Diodes Incorporated announced its most advanced dataline transient voltage suppressor (TVS) ever, the DESD3V3Z1BCSF-7 . Designed to provide exceptional TVS/ESD protection to the high-speed input/output ports of advanced systems-on-chips (SoCs) ...
Additional U-MOS IX-H devices offer lowest-in-class on-resistance Toshiba Electronics Europe has started to ship two new 100 V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are ideally suited to power supply ...
Diode combines up to 30 kV protection with small footprint Toshiba Electronics Europe has introduced a new bi-directional electrostatic discharge (ESD) protection diode DF2B7ASL which is mainly targeting interface protection in applications with ...